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F3-12800CL9D-4GBSQ
DDR3-1600 PC3 12800 4GB(2GB x 2) CL 9-9-9-28 1.5 Volts. Model name F3-12800CL9D-4GBSQ Series SQ Capacity 4 GB (2 x 2048 MB) Module amount 2 pieces placement two-sided Design SO-DIMM Type DDR3 Connection 204-Pin Voltage by 1.425 Voltage until 1.575 Voltage Standard...
2460 
Piegādātāja noliktavā: 4 prece(s)
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Atlaide 28%
F4-2400C15S-8GIS
Atvērts iepakojums Memory type DDR4 Memory capacity 8192 MB Memory bus frequency 2400 MHz Type of memory Unbuffered Type of memory Non-ECC Number of memories in bundle 1 CAS Latency (CL)...
3450  2500 
Jūsu ietaupījums: 9.50 €
Piegādātāja noliktavā: 1 prece(s)
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F4-2133C15S-8GNT
Memory type DDR4 Memory capacity 8192 MB Memory bus frequency 2133 MHz Type of memory Unbuffered Type of memory Non-ECC Number of memories in bundle 1 CAS Latency (CL) CL15 Heatsink Nē Additional information Height: 31.2 mm / 1.2 inch
2580 
Piegādātāja noliktavā: 2 prece(s)
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F4-2400C17S-8GIS
SPD speed 2400 MHz SPD voltage 1.2 V SPD profile Y Memory voltage 1.2 V SPD latency 39 Product condition Bulk / recertified Internal memory 8 GB Buffered memory type...
2610 
Piegādātāja noliktavā: 7 prece(s)
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F3-1866C11S-8GRSL
Memory layout (modules x size) 1 x 8 GB Component for Laptop Memory clock speed 1866 MHz CAS latency 11 Internal memory type DDR3 Memory channels Single-channel Internal memory 8 GB Memory voltage 1.35 Harmonized System (HS) code 84733020
2610 
Piegādātāja noliktavā: 1 prece(s)
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F3-10600CL9D-8GBNT
Memory type DDR3 Memory capacity 8192 MB Memory bus frequency 1333 MHz Type of memory Unbuffered Type of memory Non-ECC Number of memories in bundle 2 CAS Latency (CL) CL9 Heatsink Nē Additional information Voltage: 1.5V
2630 
Piegādātāja noliktavā: 16 prece(s)
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F3-1600C11D-8GRSL
Internal memory type DDR3 Memory clock speed 1600 MHz Memory channels Dual-channel CAS latency 11 Internal memory 8 GB Component for Laptop Memory voltage 1.35 V Memory form factor 204-pin SO-DIMM Memory layout (modules x size) 2 x 4 GB...
2630 
Piegādātāja noliktavā: 5 prece(s)
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F4-2400C16S-8GRS
Memory type SODIMM DDR4 Memory capacity 8192 MB Memory bus frequency 2400 MHz Number of memories in bundle 1 CAS Latency (CL) CL16 Heatsink Nē
2680 
Piegādātāja noliktavā: 10 prece(s)
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F4-2133C15S-8GIS
Memory type DDR4 Memory capacity 8192 MB Memory bus frequency 2133 MHz Type of memory Unbuffered Type of memory Non-ECC Number of memories in bundle 1 CAS Latency (CL) CL15 Heatsink Nē Additional information Voltage: 1.2V Additional...
2700 
Piegādātāja noliktavā: 7 prece(s)
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2700 
Piegādātāja noliktavā: 10 prece(s)
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F3-1333C9D-8GIS
Internal memory type DDR3 Component for PC/server Memory clock speed 1333 MHz Internal memory 8 GB Memory layout (modules x size) 2 x 4 GB ECC N Memory voltage 1.5 V Buffered...
2700 
Piegādātāja noliktavā: 7 prece(s)
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F3-1600C9D-8GRSL
Internal memory 8 GB Internal memory type DDR3 Component for Notebook Memory clock speed 1600 MHz CAS latency 9 Memory layout (modules x size) 2 x 4 GB Memory channels Dual-channel...
2700 
Piegādātāja noliktavā: 1 prece(s)
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F3-1600C11D-8GSL
Low Voltage, High Performance Required only 1.35V, the G.SKILL low voltage SO-DIMM memory kit consumes less power and generates less heat. It is the perfect memory solution to extend your laptop's battery life and enhance the stability due to lower temperature. Boost The Performance Of...
2700 
Piegādātāja noliktavā: 10 prece(s)
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F3-12800CL9D-8GBSQ
DDR3-1600 PC3 12800 8GB(4GB x 2) CL 9-9-9-28 1.5 Volts. Model name F3-12800CL9D-8GBSQ Capacity 8 GB (2 x 4096 MB) Module amount 2 pieces placement two-sided memory chips amount 32 (16per module) data density 2048 each memory chip organisation 256Mx8 Design SO-DIMM...
2750 
Piegādātāja noliktavā: 2 prece(s)
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FA-1600C11S-8GSQ
G.SKILL DDR3 for Apple 8GB 1600MHz CL9 SO-DIMM 1.5V Product Description G.Skill SQ Series - DDR3 - 8 GB - SO-DIMM 204-pin - unbuffered Product Type RAM memory Capacity 8 GB Memory Type DDR3 SDRAM - SO-DIMM 204-pin Upgrade Type System specific Data Integrity...
2760 
Piegādātāja noliktavā: 1 prece(s)
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F4-2666C19S-8GIS
Memory type DDR4 Memory capacity 8192 MB Memory bus frequency 2666 MHz Type of memory Unbuffered Type of memory Non-ECC Number of memories in bundle 1 CAS Latency (CL) CL19 Heatsink Nē Additional information Voltage: 1.2V Additional...
2810 
Piegādātāja noliktavā: 10 prece(s)
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